30-04-2021

Mosfet 20n60



Description

STW20NM60FD - W20NM60FD N-CHANNEL MOSFET 20A 600V 3-PIN TO-247 Product Condition: Refurbished Absolute Maximum Ratings 1. Drain−source voltage: VDSS = 600 V 2. Drain−gate voltage (RGS = 20 kΩ): VDGR = 600 V 3. Gate−source voltage: VGSS = ±30 V 4. Drain power dissipation (Tc = 25°C): PD = 192W 5. Single pulse avalanche energy: EAS = 663 mJ 6. Avalanche current: IAR = 20 A 7. MOSFET transistor FQPF IRF 15N60 16N60 18N60 20N65 24N60 26N60 20N60 TO-220F mosfet 20n60 transistors 20n60c3. US $0.69-$0.70 / Piece. 5000 Pieces (Min. Order) Wuxi Yarun Semiconductor Technology Co., Ltd. 92.3% Response Rate. 5.0 (3) Contact Supplier. FQA28N50F 500V N-Channel MOSFET.

  • The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode.
  • UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

Original N-CHANNEL MOSFET 20N60C3 20N60 20A 600V TO-220 New Infineon Technologies. Datasheet 20N60C3 20N60 20A 600V TO-220. Original N-CHANNEL MOSFET SPP20N60C3 20N60C3 20N60 20A 600V TO-220 New Infineon Technologies from AUTHELECTRONIC (10-20 days working) Albania, Algeria, Argentina, Armenia, Australia, Austria, Azerbaijan, Bahran, Bangladesh.

Mosfet 20n60

Details

Product Description:

STW20NM60FD - W20NM60FD N-CHANNEL MOSFET 20A 600V 3-PIN TO-247
Product Condition : Refurbished
Absolute Maximum Ratings
1. Drain−source voltage : VDSS = 600 V
2. Drain−gate voltage (RGS = 20 kΩ) : VDGR = 600 V
3. Gate−source voltage : VGSS = ±30 V
4. Drain power dissipation (Tc = 25°C) : PD = 192W
5. Single pulse avalanche energy : EAS = 663 mJ
6. Avalanche current : IAR = 20 A
7. Repetitive avalanche energy : EAS = 700 mJ
Package Included:
1x W20NM60FD N-CHANNEL MOSFET 20A 600V 3-PIN TO-247

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